Low-voltage organic electroluminescent devices using pin structures

被引：302

作者：

Huang, JS ^{[1
]}

Pfeiffer, M

Werner, A

Blochwitz, J

Leo, K

Liu, SY

机构：

[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

[2] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1432110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have realized a small-molecule organic light-emitting diode where the intrinsic emitter layer is sandwiched by n- and p-doped transport layers with appropriate blocking layers. The diodes based on this pin concept have exponential forward characteristics up to comparatively high current densities. The diodes reach high brightness at very low operating voltage: for instance, 1000 cd/m(2) at a voltage of 2.9 V. Despite the highly doped transport layers, the devices reach very high efficiency for the given emitter system up to high brightness. (C) 2002 American Institute of Physics.

引用

页码：139 / 141

页数：3

共 28 条

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