Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers

被引：236

作者：

Deng, ZB ^{[1
]}

Ding, XM

Lee, ST

Gambling, WA

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Kowloon, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Peoples R China

[3] Fudan Univ, Surface Phys Lab, State Key Lab, Shanghai 200433, Peoples R China

[4] City Univ Hong Kong, Dept Elect Engn, Kowloon, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic electroluminescent devices using SiO2 as a hole-injecting buffer have been fabricated. With the presence of the buffer, the luminance of the device reaches 1820 cd/m(2) at the current density of 20 mA/cm(2), which corresponds to an efficiency of 9.1 cd/A. The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode. (C) 1999 American Institute of Physics. [S0003-6951(99)02915-0].

引用

页码：2227 / 2229

页数：3

共 17 条

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