Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers

被引:236
作者
Deng, ZB [1 ]
Ding, XM
Lee, ST
Gambling, WA
机构
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Kowloon, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Peoples R China
[3] Fudan Univ, Surface Phys Lab, State Key Lab, Shanghai 200433, Peoples R China
[4] City Univ Hong Kong, Dept Elect Engn, Kowloon, Peoples R China
关键词
D O I
10.1063/1.123809
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic electroluminescent devices using SiO2 as a hole-injecting buffer have been fabricated. With the presence of the buffer, the luminance of the device reaches 1820 cd/m(2) at the current density of 20 mA/cm(2), which corresponds to an efficiency of 9.1 cd/A. The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode. (C) 1999 American Institute of Physics. [S0003-6951(99)02915-0].
引用
收藏
页码:2227 / 2229
页数:3
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