Electric-field-enhanced growth of carbon nanotubes for scanning probe microscopy

被引：40

作者：

Ono, T

Miyashita, H

Esashi, M

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Mechatron & Precis Engn, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Venture Business Lab, Sendai, Miyagi 9808579, Japan

来源：

NANOTECHNOLOGY | 2002年 / 13卷 / 01期

关键词：

D O I：

10.1088/0957-4484/13/1/314

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of an electric field on carbon nanotube (CNT) growth using hot-filament chemical vapour deposition is investigated. Acetylene (C2H2) gas diluted with hydrogen is used as the source gas for the growth of CNTs, and a bias voltage of -300 V is applied to the sample stage during growth. The silicon substrate onto which the CNT is grown is prepared by Sputtering a, thin catalysed metal (Ni) film onto the surface, and the CNT is selectively grown from the tip of a silicon protrusion on the substrate. It is found that the application of a high electrostatic field with a negative substrate bias enhances the growth of CNTs in this situation. This effect is successfully applied to the fabrication of a CNT tip supported by a silicon cantilever for use in scanning probe microscopy.

引用

页码：62 / 64

页数：3

共 13 条

[1] GROWTH MORPHOLOGIES DURING COBALT-CATALYZED SINGLE-SHELL CARBON NANOTUBE SYNTHESIS [J].