Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure -: art. no. 201308

被引：14

作者：

Hillman, C ^{[1
]}

Jiang, HW

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.64.201308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be pinned in a very narrow range of magnetic field in the vicinity of the nuclear magnetic resonance (NMR) of the nuclei of the GaAs crystal, Our observations suggest that this pinning effect is the result of a competition process between the ESR-induced dynamic nuclear polarization and the NMR-induced depolarization.

引用

页数：4

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