Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope

被引：51

作者：

Hyon, CK ^{[1
]}

Choi, SC

Hwang, SW

Ahn, D

Kim, Y

Kim, EK

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[2] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea

[3] Korea Inst Sci & Technol, Semicond Mat Res Lab, Seoul 130650, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.124351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A resistless nanostructure patterning technique using tip oscillation of an atomic force microscope (AFM) was systematically investigated. Commercial AFM cantilevers are used to successfully generate patterns as narrow as 10 nm on a GaAs surface, without further sharpening of the tips. Reliable patterns with fully controlled width and depth are achieved by adjusting the feedback gain and the scan speed. This process allows nanometer-scale patterning to be performed simply, and is well suited for nanodevice fabrication. (C) 1999 American Institute of Physics. [S0003-6951(99)03828-0].

引用

页码：292 / 294

页数：3

共 15 条

[1] SURFACE MODIFICATION WITH THE SCANNING TUNNELING MICROSCOPE [J].