Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

被引:23
作者
Ahire, R. R. [1 ,2 ]
Sagade, Abhay A. [1 ]
Chavhan, S. D. [4 ]
Huse, V. [1 ]
Gudage, Y. G. [1 ]
Singh, F. [3 ]
Avasthi, D. K. [3 ]
Phase, D. M. [5 ]
Sharma, Ramphal [1 ]
机构
[1] Dr Babasaheb Ambedkar Marathwada Univ, Dept Phys, Thin Film & Nanotechnol Lab, Aurangabad 431004, Maharashtra, India
[2] SG Patil Coll, Dept Phys, Sakri 424304, MS, India
[3] Interuniv Accelerator Ctr, New Delhi 67, India
[4] Dept Chem Engn, Chonbuk Natl Lab, Chonju, Jeonju, South Korea
[5] UGC DAE CSR, Indore 452017, Madhya Pradesh, India
关键词
Annealing; Bismuth sulphide; Grain growth; SHI; Thermal spike; Thermoemf; INDUCED GRAIN-GROWTH; THIN-FILMS; BI2S3; NANORODS; IRRADIATION; METALS;
D O I
10.1016/j.cap.2008.03.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films' structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 degrees C and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 x 10(12) ions/cm(2) fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:374 / 379
页数:6
相关论文
共 34 条
[1]   Engineering of nanocrystalline cadmium sulfide thin films by using swift heavy ions [J].
Ahire, R. R. ;
Sagade, Abhay A. ;
Deshpande, N. G. ;
Chavhan, S. D. ;
Sharma, Ramphal ;
Singh, F. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (16) :4850-4854
[2]  
AHIRE RR, 2006, P ICRTNT, P44
[3]   THERMAL-SPIKE TREATMENT OF ION-INDUCED GRAIN-GROWTH - THEORY AND EXPERIMENTAL COMPARISON [J].
ALEXANDER, DE ;
WAS, GS .
PHYSICAL REVIEW B, 1993, 47 (06) :2983-2994
[4]   Silicon nanowires as efficient thermoelectric materials [J].
Boukai, Akram I. ;
Bunimovich, Yuri ;
Tahir-Kheli, Jamil ;
Yu, Jen-Kan ;
Goddard, William A., III ;
Heath, James R. .
NATURE, 2008, 451 (7175) :168-171
[5]  
Chowdhury S, 2005, INDIAN J PHYS, V79, P1019
[6]   Modifications in physical, optical and electrical properties of tin oxide by swift heavy Au8+ ion bombardment [J].
Deshpande, Nishad G. ;
Sharma, Ramphal .
CURRENT APPLIED PHYSICS, 2008, 8 (02) :181-188
[7]   CORRELATION FROM RANDOMNESS - QUANTITATIVE-ANALYSIS OF ION-ETCHED GRAPHITE SURFACES USING THE SCANNING TUNNELING MICROSCOPE [J].
EKLUND, EA ;
SNYDER, EJ ;
WILLIAMS, RS .
SURFACE SCIENCE, 1993, 285 (03) :157-180
[8]   Two mechanisms of nanocrystals formation under ion irradiation of silicon [J].
Ezhevskii, A. A. ;
Tetelbaum, D. I. ;
Mendeleva, Yu. A. ;
Guseinov, D. V. ;
Kiseleva, E. V. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (1-2 SPEC. ISS.) :68-70
[9]   Ion-solid interactions: current status, new perspectives [J].
Fink, D ;
Chadderton, LT .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2005, 160 (3-4) :67-83
[10]  
Fleischer R. L., 1975, Nuclear Tracks in Solids: Principles and Applicaations