Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

被引：23

作者：

Ahire, R. R. ^{[1
,2
]}

Sagade, Abhay A. ^{[1
]}

Chavhan, S. D. ^{[4
]}

Huse, V. ^{[1
]}

Gudage, Y. G. ^{[1
]}

Singh, F. ^{[3
]}

Avasthi, D. K. ^{[3
]}

Phase, D. M. ^{[5
]}

Sharma, Ramphal ^{[1
]}

机构：

[1] Dr Babasaheb Ambedkar Marathwada Univ, Dept Phys, Thin Film & Nanotechnol Lab, Aurangabad 431004, Maharashtra, India

[2] SG Patil Coll, Dept Phys, Sakri 424304, MS, India

[3] Interuniv Accelerator Ctr, New Delhi 67, India

[4] Dept Chem Engn, Chonbuk Natl Lab, Chonju, Jeonju, South Korea

[5] UGC DAE CSR, Indore 452017, Madhya Pradesh, India

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 02期

关键词：

Annealing; Bismuth sulphide; Grain growth; SHI; Thermal spike; Thermoemf; INDUCED GRAIN-GROWTH; THIN-FILMS; BI2S3; NANORODS; IRRADIATION; METALS;

D O I：

10.1016/j.cap.2008.03.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films' structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 degrees C and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 x 10(12) ions/cm(2) fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：374 / 379

页数：6

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