Two mechanisms of nanocrystals formation under ion irradiation of silicon

被引：1

作者：

Ezhevskii, A. A. ^{[1
]}

Tetelbaum, D. I. ^{[1
]}

Mendeleva, Yu. A. ^{[1
]}

Guseinov, D. V. ^{[1
]}

Kiseleva, E. V. ^{[1
]}

机构：

[1] Univ Nizhniy Novgorod, Nizhnii Novgorod 603950, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷 / 1-2 SPEC. ISS.期

基金：

俄罗斯基础研究基金会;

关键词：

ion irradiation; silicon; nanostructures; photolurninescence;

D O I：

10.1016/j.nimb.2006.12.162

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The irradiation of silicon surface with ions results in the appearance of photoluminescence (PL) properties which are characteristic of Si nanocrystals. Two fluence ranges are considered - low fluence region, LFR (near the amorphization threshold) and high fluence region, HFR. For the LFR, the PL appears after annealing at similar to 300 degrees C, whereas for the PL at HFR, the annealing is not required. It is suggested that PL for LFR is associated with nanocrystalline regions remaining in the amorphous layer. The computer algorithm is elaborated for the calculation of fluence kinetics of nanostructure evolution which provides qualitative agreement with experimental PL fluence dependence. For the HFR, another model is suggested which relates the formation of nanocrystals beneath the amorphous layer with driving self-interstitial atoms (recoils) into the depth. The strong inhomogeneous mechanical stresses caused by this process leads to the nanofragmentation of the structure in the deep interstitial-enriched layer of silicon. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：68 / 70

页数：3

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