CALCULATION OF SECONDARY DEFECT FORMATION AT ION-IMPLANTATION OF SILICON

被引：17

作者：

MOROZOV, NP ^{[1
]}

TETELBAUM, DI ^{[1
]}

PAVLOV, PV ^{[1
]}

ZORIN, EI ^{[1
]}

机构：

[1] GORKI PHYS ENGN RES INST,GORKI,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 37卷 / 01期

关键词：

D O I：

10.1002/pssa.2210370107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：57 / 64

页数：8

共 19 条

[1]

Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[2]

DEKOCK AJR, 1973, PHILIPS RES REP S, V1, P1

[3]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[4] THEORETICAL CALCULATION OF DIRECT PRODUCTION OF DIVACANCIES IN SILICON [J].

FLICKER, H ;

PATTERSON, WR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4998-+

[5] PECULIARITIES OF SILICON AMORPHIZATION AT ION-BOMBARDMENT [J].

GERASIMOV, AI ;

ZORIN, EI ;

TETELBAUM, DI ;

PAVLOV, PV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02) :679-+

[6]

Kinchin G. H., 1955, REPORTS PROGR PHYS, V18

[7]

Martynenko Yu. V., 1969, Fizika Tverdogo Tela, V11, P1968

[8]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[9] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI [J].

NELSON, RS ;

MAZEY, DJ .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :689-&

[10]

PAVLOV PV, 1966, FIZ TVERD TELA, V8, P2679

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