Luminescence of silicon nanostructured by irradiation with heavy ions

被引：8

作者：

Tetelbaum, DI

Trushin, SA

Krasil'nik, ZF

Gaponova, DM

Mikhailov, AN

机构：

[1] Nizhnii Novgorod State Univ, Phystech Res Inst, Nizhnii Novgorod 603600, Russia

[2] Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期

关键词：

nanocrystalline silicon; amorphous silicon; quantum dots; ion irradiation; photoluminescence;

D O I：

10.1016/S0925-3467(01)00074-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ion-beam formation and luminescence properties of nanosystem consisting of silicon nanocrystals within amorphous silicon are investigated. The system is produced with Kr+ (80 keV) irradiation, The appearance of the nanocrystals confined by overlapped amorphous regions (formed up along ion tracks) is simulated by the Monte-Carlo method. Tt is shown that the system exhibits the luminescence spectrum with the peaks that are characteristic for amorphous silicon and silicon nanocrystals, respectively. The changes of luminescence spectra with dose and with measuring temperature are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：57 / 59

页数：3

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