Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5)O-3 thin films using MOCVD

被引：21

作者：

Liu, DH

Chen, H

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

MATERIALS LETTERS | 1996年 / 28卷 / 1-3期

关键词：

lead scandium tantalate; ferroelectric; pyroelectric; imaging; perovskite; thin films; MOCVD; silicon substrates; low temperature deposition;

D O I：

10.1016/0167-577X(96)00029-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single perovskite phase Pb(Sc0.5Ta0.5)O-3 (PST) thin films have been grown using an one-stage MOCVD method. The processing temperature was 600 degrees C. The film structure as a function of Pb/(Sc + Ta) flow ratio was determined using X-ray diffraction (XRD) and scanning electron microscopy (SEM).

引用

页码：17 / 20

页数：4

共 7 条

[1] DEPOSITION OF FERROELECTRIC OXIDES BY MOCVD [J].

AINGER, FW ;

BASS, K ;

BRIERLEY, CJ ;

HUDSON, MD ;

TRUNDLE, C ;

WHATMORE, RW .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1991, 22 (03) :183-197

[2] METAL ALKOXIDES AS PRECURSORS FOR ELECTRONIC AND CERAMIC MATERIALS [J].

BRADLEY, DC .

CHEMICAL REVIEWS, 1989, 89 (06) :1317-1322

[3]

LIU D, 1994, BR CERAM P, V53, P111

[4]

LIU D, 1995, J APPL PHYS, V77, P1458

[5] SOL-GEL SYNTHESIS OF PB(SC0.5TA0.5)O3 POWDERS AND THIN-LAYERS [J].

LIU, DH ;

MA, LQ ;

PAYNE, DA ;

VIEHLAND, DD .

MATERIALS LETTERS, 1993, 17 (05) :319-322

[6]

SEFTER N, 1980, J APPL PHYS, V51, P4365

[7]

WHATMORE RW, 1992, P 8 IEEE ISAF M, P202

← 1 →