Monolithic fabrication and electrical characteristics of polycrystalline silicon field emitters and thin film transistor

被引：29

作者：

Hashiguchi, G

Mimura, H

Fujita, H

机构：

[1] ATR, OPT & RADIO COMMUN RES LABS, SEIKA, KYOTO 61902, JAPAN

[2] UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 1B期

关键词：

field emitter; poly-Si; TFT; mold; anisotropic etching;

D O I：

10.1143/JJAP.35.L84

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a novel monolithic fabrication method for polycrystalline silicon (poly-Si) field emitters and a poly-Si thin film transistor (TFT). Poly-Si field emitters were fabricated using a mold transfer process, which allows a TFT to be fabricated under the field emitters and saves space for emitter fabrication. We have also demonstrated successful control of tile field emission using the monolithically fabricated TFT.

引用

页码：L84 / L86

页数：3

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