ALD growth, thermal treatments and characterisation of Al2O3 layers

被引：23

作者：

Ghiraldelli, E. ^{[1
]}

Pelosi, C. ^{[1
]}

Gombia, E. ^{[1
]}

Chiavarotti, G. ^{[2
]}

Vanzetti, L. ^{[3
]}

机构：

[1] IMEM CNR, I-43100 Parma, Italy

[2] OIDA SaS R&D, I-20152 Milan, Italy

[3] Fdn Bruno Kessler Irst, I-38050 Povo, Italy

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

Al2O3; High K dielectrics; ALD growth; C-V measurements; XPS analysis; Thermal treatment;

D O I：

10.1016/j.tsf.2008.08.052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al2O3 films with thickness ranging from 20 to 300 nm are grown in a home-made reactor using atomic layer deposition with trimethylaluminum and water on different semiconductor substrates. The deposited films are investigated in terms of composition and electrical properties. Annealing treatments appear necessary in order to obtain films with good insulating properties, although the same treatments do not affect the stoichiometry of the main components. (C) 2008 Elsevier B.V. All rights reserved.

引用

收藏

页码：434 / 436

页数：3

相关论文

共 12 条

[1] C 1s and Au 4f(7/2) referenced XPS binding energy data obtained with different aluminium oxides, -hydroxides and -fluorides [J].

Bose, O ;

Kemnitz, E ;

Lippitz, A ;

Unger, WES .

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1997, 358 (1-2) :175-179

[2] Low-temperature Al2O3 atomic layer deposition [J].

Groner, MD ;

Fabreguette, FH ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645

[3] Physical characterization of thin ALD-Al2O3 films [J].

Jakschik, S ;

Schroeder, U ;

Hecht, T ;

Krueger, D ;

Dollinger, G ;

Bergmaier, A ;

Luhmann, C ;

Bartha, JW .

APPLIED SURFACE SCIENCE, 2003, 211 (1-4) :352-359

[4] Crystallization behavior of thin ALD-Al2O3 filMS [J].

Jakschik, S ;

Schroeder, U ;

Hecht, T ;

Gutsche, M ;

Seidl, H ;

Bartha, JW .

THIN SOLID FILMS, 2003, 425 (1-2) :216-220

[5] Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering [J].

Kelly, PJ ;

Arnell, RD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (03) :945-953

[6] Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition [J].

Kim, JY ;

Hwang, MS ;

Kim, YH ;

Kim, HJ ;

Lee, Y .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2469-2473

[7] Low temperature (<100°C) deposition of aluminum oxide thin films by ALD with O3 as oxidant [J].

Kim, SK ;

Lee, SW ;

Hwang, CS ;

Min, YS ;

Won, JY ;

Jeong, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (05) :F69-F76

[8] Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation [J].

Kim, SK ;

Hwang, CS .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) :2323-2329

[9] IR and NMR study of the chemisorption of ammonia on trimethylaluminum-modified silica [J].

Puurunen, RL ;

Root, A ;

Haukka, S ;

Iiskola, EI ;

Lindblad, M ;

Krause, AOI .

JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (28) :6599-6609

[10] Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process [J].

Puurunen, RL .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)