Crystallization behavior of thin ALD-Al2O3 filMS

被引：245

作者：

Jakschik, S

Schroeder, U

Hecht, T

Gutsche, M

Seidl, H

Bartha, JW

机构：

[1] Infineon Technol Dresden GmbH & Co OHG, D-01099 Dresden, Germany

[2] Dresden Univ Technol IHM, D-01062 Dresden, Germany

来源：

THIN SOLID FILMS | 2003年 / 425卷 / 1-2期

关键词：

Al2O3; crystallization; atomic layer deposition (ALD); dielectric constant;

D O I：

10.1016/S0040-6090(02)01262-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Integration of materials with a high dielectric constant into storage or gate capacitor applications requires a detailed understanding of the crystallization behavior. The dependence of crystallinity on annealing temperature and time was studied for thin atomic-layer-deposited (ALD) Al2O3 films of varying thickness, using grazing-incidence X-ray diffraction. The correlation between dielectric constant and annealing condition was investigated and an increase in dielectric constant due to annealing was observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：216 / 220

页数：5

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