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Strain effect on electronic transport and ferromagnetic transition temperature in La0.9Sr0.1MnO3 thin films -: art. no. 174402
被引:89
作者:

Chen, XJ
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机构:
Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

Soltan, S
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机构: Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

Zhang, H
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机构: Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

Habermeier, HU
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机构: Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
机构:
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Kent State Univ, Dept Phys, Kent, OH 44242 USA
关键词:
D O I:
10.1103/PhysRevB.65.174402
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature T-c of high-quality La0.9Sr0.1MnO3 thin films epitaxially grown on (100) SrTiO3 substrates. Both the magnetization and the resistivity are critically dependent on the film thickness. T-c is enhanced with decreasing the film thickness due to the compressive stain produced by lattice mismatch. The resistivity above 165 K of the films with various thicknesses is consistent with small polaronic hopping conductivity. The polaronic formation energy E-P is reduced with the decrease of film thickness. We found that the strain dependence of T-c mainly results from the strain-induced electron-phonon coupling. The strain effect on E-P is in good agreement with the theoretical predictions.
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页码:1744021 / 1744026
页数:6
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