Strain effect on electronic transport and ferromagnetic transition temperature in La0.9Sr0.1MnO3 thin films -: art. no. 174402

被引:89
作者
Chen, XJ [1 ]
Soltan, S
Zhang, H
Habermeier, HU
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Kent State Univ, Dept Phys, Kent, OH 44242 USA
关键词
D O I
10.1103/PhysRevB.65.174402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature T-c of high-quality La0.9Sr0.1MnO3 thin films epitaxially grown on (100) SrTiO3 substrates. Both the magnetization and the resistivity are critically dependent on the film thickness. T-c is enhanced with decreasing the film thickness due to the compressive stain produced by lattice mismatch. The resistivity above 165 K of the films with various thicknesses is consistent with small polaronic hopping conductivity. The polaronic formation energy E-P is reduced with the decrease of film thickness. We found that the strain dependence of T-c mainly results from the strain-induced electron-phonon coupling. The strain effect on E-P is in good agreement with the theoretical predictions.
引用
收藏
页码:1744021 / 1744026
页数:6
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