Low-cost 1.55-mu m InGaAsP-InP spot size converted (SSC) laser with conventional active layers

被引：21

作者：

Fang, RY ^{[1
]}

Bertone, D ^{[1
]}

Meliga, M ^{[1
]}

Montrosset, I ^{[1
]}

Oliveti, G ^{[1
]}

Paoletti, R ^{[1
]}

机构：

[1] POLITECN TORINO, I-10129 TURIN, ITALY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 08期

关键词：

integrated optics; optical couplers; semiconductor junction lasers;

D O I：

10.1109/68.605508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the realization of a low-cost 1.55-mu m spot size converted (SSC) laser using conventional SCH-MQW active layers, The laser consists of a rectangular gain section, a linear taper and a passive waveguide. The lateral taper and the passive waveguide are fabricated on the same lower SCH layer, using conventional photolithography and RIE (reactive ion etching). The device exhibits low beam divergence of 6.6 degrees x 10.9 degrees and -2.2-dB coupling loss with a cleaved single-mode fiber, The l-dB alignment tolerance is +/- 2.15 mu m in vertical direction and +/- 2.3 mu m in lateral direction, respectively.

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收藏

页码：1084 / 1086

页数：3

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