n-Type Naphthalene Diimide-Biselenophene Copolymer for All-Polymer Bulk Heterojunction Solar Cells

被引:118
作者
Hwang, Ye-Jin
Ren, Guoqiang
Murari, Nishit M.
Jenekhe, Samson A. [1 ]
机构
[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA
基金
美国国家科学基金会;
关键词
LOW-BANDGAP POLYMERS; CONJUGATED POLYMERS; ELECTRON-TRANSPORT; PHOTOVOLTAIC CELLS; CHARGE-TRANSPORT; PHASE-SEPARATION; ACCEPTOR; DONOR; MOBILITY; SEMICONDUCTORS;
D O I
10.1021/ma3020239
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A new solution processable n-type polymer semiconductor is synthesized and characterized for use as an electron acceptor material in all-polymer bulk heterojunction solar cells. The new crystalline copolymer, poly(naphthalene diimide-alt-biselenophene) (PNDIBS), has a high field-effect electron mobility (0.07 cm(2)/(V s)) and broad visible-near-infrared absorption band with an optical band gap of 1.4 eV. All-polymer bulk heterojunction solar cells comprised of PNDIBS acceptor and poly(3-hexylthiophene) donor have a photovoltaic power conversion efficiency of 0.9%. The external quantum efficiency spectrum of the all-polymer solar cells shows that about 19% of the photocurrent comes from the near infrared (700-900 nm) light harvesting by the new n-type polymer semiconductor.
引用
收藏
页码:9056 / 9062
页数:7
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