Mob power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications

被引：23

作者：

Vetury, R ^{[1
]}

Wei, Y ^{[1
]}

Green, SR ^{[1
]}

Mercier, TW ^{[1
]}

Leverich, K ^{[1
]}

Garber, PM ^{[1
]}

Poulton, MJ ^{[1
]}

Shealy, JB ^{[1
]}

机构：

[1] RF Micro Devices, Infrastruct Prod Line, Charlotte, NC 28269 USA

来源：

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年

关键词：

field plate; GaN; HEMT; WCDMA;

D O I：

10.1109/MWSYM.2005.1516636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report AlGaN/CaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate widths. As a measure of the status of GaN technology achieved in this work, small periphery 150 mu m HEMT demonstrated a continuous wave (CW) output power density of 22.7 W/mm at 2.14 CHz with power added efficiency (PAE) of 54% when biased at a drain-source voltage (V-DS) of 80 V. As a demonstration of the scalability of this technology, a 20-mm-wide device exhibited 100 W CW output power and a simultaneous peak PAE of 55.3% at 2.14 GHz when biased at class AB and V-DS=48V. WCDMA measurements on the 20mm part demonstrated ACP of -35 dBc at 42.5 dBm output power and 30% PAE under the same bias condition. Analysis of FP related performance tradeoffs are also presented in this work.

引用

页码：487 / 490

页数：4

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