AlGaN/GaN HEMTs - An overview of device operation and applications

被引：1742

作者：

Mishra, UK ^{[1
]}

Parikh, P

Wu, YF

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn 1, Santa Barbara, CA 93106 USA

[2] Cree Lighting Co, Goleta, CA 93117 USA

来源：

PROCEEDINGS OF THE IEEE | 2002年 / 90卷 / 06期

关键词：

gallium nitride; high-electron mobility transistor; (HEMTs); MMICs; polarization;

D O I：

10.1109/JPROC.2002.1021567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide bandgap, semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

引用

页码：1022 / 1031

页数：10

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