Quantum dot formation and dynamic scaling behavior of SnO2 nanocrystals induced by pulsed delivery -: art. no. 033115

被引：19

作者：

Chen, ZW ^{[1
]}

Lai, JKL ^{[1
]}

Shek, CH ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.2162689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum dot formation and dynamic scaling behavior of SnO2 nanocrystals in coalescence regime for growth by pulsed-laser deposition is explored experimentally and theoretically, and the same is compared with that for continuous vapor deposition such as molecular-beam epitaxy. Using high-resolution transmission electron microscopy, unusual quantum dots of SnO2 nanocrystals are studied. We present kinetic Monte-Carlo simulations for pulsed-laser deposition in the submonolayer regime and give a description of the island distance versus pulse intensity. We found that the scaling exponent for pulsed-laser deposition is 1.28 +/- 0.03, which is significantly lower as compared to that for molecular-beam epitaxy (1.62 +/- 0.03). Theoretical simulations reveal that this attractive difference can be pursued to the large fraction of multiple droplet coalescence under pulsed vapor delivery. (c) 2006 American Institute of Physics.

引用

页码：1 / 3

页数：3

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