Fractal formation and tunnelling effects on the conductivity of Au/a-Ge bilayer films

被引：27

作者：

Chen, ZW ^{[1
]}

Zhang, SY ^{[1
]}

Tan, S ^{[1
]}

Tian, ML ^{[1
]}

Hou, JG ^{[1
]}

Zhang, YH ^{[1
]}

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

来源：

THIN SOLID FILMS | 1998年 / 322卷 / 1-2期

关键词：

fractal crystallization; fractal dimension; resistance; Random Tunnelling Junction Network (RTJN) model;

D O I：

10.1016/S0040-6090(97)00907-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fractal crystallization of the Au/a-Ge bilayer films has been investigated, and the resistance characteristics have been first measured by the two-probe configuration method. The experimental results suggest that the resistance R of various annealing films are influenced by the fractal formation and the fractal dimension. These phenomena were explained by the Random Tunnelling Junction Network (RTJN) model. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：194 / 197

页数：4

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