Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

被引：197

作者：

Clima, S. ^{[1
]}

Wouters, D. J. ^{[1
,2
]}

Adelmann, C. ^{[1
]}

Schenk, T. ^{[3
]}

Schroeder, U. ^{[3
]}

Jurczak, M. ^{[1
]}

Pourtois, G. ^{[1
,4
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium

[3] Tech Univ Dresden, NaMLab, D-01187 Dresden, Germany

[4] Univ Antwerp, PLASMANT, B-2610 Antwerp, Belgium

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 09期

关键词：

POLARIZATION; ZRO2;

D O I：

10.1063/1.4867975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 mu C/cm(2). We show the correlation between the computed polarization reversal barrier and the experimental coercive fields. (C) 2014 AIP Publishing LLC.

引用

页数：4

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