Ferroelectricity in hafnium oxide thin films

被引：2060

作者：

Boescke, T. S. ^{[4
]}

Mueller, J. ^{[1
]}

Braeuhaus, D. ^{[2
]}

Schroeder, U. ^{[3
,4
]}

Boettger, U. ^{[2
]}

机构：

[1] Fraunhofer CNT, D-01099 Dresden, Germany

[2] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52062 Aachen, Germany

[3] Namlab gGmbH, D-01187 Dresden, Germany

[4] Qimonda Dresden, Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 10期

关键词：

crystal structure; crystallisation; dielectric polarisation; ferroelectric coercive field; ferroelectric thin films; ferroelectric transitions; hafnium compounds; piezoelectricity; silicon compounds; PARTIALLY-STABILIZED ZIRCONIA; NEUTRON-DIFFRACTION; TRANSITION; SILICON;

D O I：

10.1063/1.3634052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO(2) doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO(2) crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase is inhibited if crystallization occurs under mechanical encapsulation and an orthorhombic phase is obtained. This phase shows a distinct piezoelectric response, while polarization measurements exhibit a remanent polarization above 10 mu C/cm(2) at a coercive field of 1 MV/cm, suggesting that this phase is ferroelectric. Ferroelectric hafnium oxide is ideally suited for ferroelectric field effect transistors and capacitors due to its excellent compatibility to silicon technology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634052]

引用

页数：3

共 21 条

[1] Increasing permittivity in HfZrO thin films by surface manipulation [J].