Increasing permittivity in HfZrO thin films by surface manipulation

被引：62

作者：

Boescke, T. S. ^{[1
]}

Hung, P. Y. ^{[2
]}

Kirsch, P. D. ^{[2
]}

Quevedo-Lopez, M. A. ^{[3
]}

Ramirez-Bon, R. ^{[4
]}

机构：

[1] Qimonda Dresden, D-01099 Dresden, Germany

[2] SEMATECH, Austin, TX 78741 USA

[3] UT Dallas, Dallas, TX 75080 USA

[4] IPN, Ctr Invest & Estudios Avanzados, Unidad Queretaro, Queretaro 76001, Mexico

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

attenuated total reflection; Fourier transform spectra; hafnium compounds; high-k dielectric thin films; infrared spectra; nanostructured materials; permittivity; surface energy; X-ray diffraction; ZIRCONIA; HAFNIA; OXIDES;

D O I：

10.1063/1.3195623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical and physical characterization of nanoscale crystalline HfxZr1-xO2 films by x-ray diffraction (XRD) and attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Increasing the ZrO2 content generally led to an increase in tetragonal phase fraction and dielectric constant. This was reflected in both XRD and ATR-FTIR measurements. We demonstrate that not only the composition, but also the distribution of ZrO2 throughout the film determines phase formation. Concentrating ZrO2 at the top surface of the film allowed the dielectric constant to be optimized for a given composition. These observations are explained by a surface energy thermodynamic model.

引用

页数：3

共 16 条

[1] Physical and electrical properties of hafnium-zirconium-oxide films grown by atomic layer deposition [J].