First-principles investigation of high-κ dielectrics:: Comparison between the silicates and oxides of hafnium and zirconium -: art. no. 184301

被引:121
作者
Rignanese, GM
Gonze, X
Jun, G
Cho, KJ
Pasquarello, A
机构
[1] Catholic Univ Louvain, Unite Physicochim & Phys Mat, B-1348 Louvain, Belgium
[2] Catholic Univ Louvain, Res Ctr Microscop & Nanoscop Mat & Elect Devices, B-1348 Louvain, Belgium
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[4] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[5] Ecole Polytech Fed Lausanne, Inst Theorie Phenomenes Phys, CH-1015 Lausanne, Switzerland
[6] PHB Ecublens, Inst Romand Rech Numer Phys Mat, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1103/PhysRevB.69.184301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using density-functional theory, we investigate the structural, vibrational, and dielectric properties of Hf and Zr oxides and silicates which have drawn considerable attention as alternative high-kappa materials. For the silicates, we consider hafnon HfSiO4 and zircon ZrSiO4; while for the oxides, we study the cubic and tetragonal phases of HfO2 and ZrO2. Special emphasis is put on the analysis of the differences and similarities between Hf and Zr in these materials. In particular, we discuss the Born effective charge tensors, the phonon frequencies at the Gamma point of the Brillouin zone, and the dielectric permittivity tensors. Our study reveals very similar properties of Hf and Zr compounds, which are essentially related to the chemical homology of Hf and Zr.
引用
收藏
页码:184301 / 1
页数:10
相关论文
共 41 条
[1]   STRUCTURE AND IONIC MOBILITY OF ZIRCONIA AT HIGH-TEMPERATURE [J].
ALDEBERT, P ;
TRAVERSE, JP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (01) :34-40
[2]   Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films [J].
Callegari, A ;
Cartier, E ;
Gribelyuk, M ;
Okorn-Schmidt, HF ;
Zabel, T .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6466-6475
[3]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[4]   VIBRATIONAL SPECTRUM OF ZIRCON (ZRSIO4) [J].
DAWSON, P ;
HARGREAV.MM ;
WILKINSO.GR .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :240-+
[5]   Long-range Coulomb interaction in ZrO2 [J].
Detraux, F ;
Ghosez, P ;
Gonze, X .
PHYSICAL REVIEW LETTERS, 1998, 81 (15) :3297-3297
[6]   Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics [J].
Fiorentini, V ;
Gulleri, G .
PHYSICAL REVIEW LETTERS, 2002, 89 (26) :266101/1-266101/4
[7]   ANHARMONICITY IN SILICATE CRYSTALS - TEMPERATURE-DEPENDENCE OF AU TYPE VIBRATIONAL MODES IN ZRSIO4 AND LIALSI2O6 [J].
GERVAIS, F ;
PIRIOU, B ;
CABANNES, F .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (11) :1785-1796
[8]  
Ghosez P, 1998, PHYS REV B, V58, P6224, DOI 10.1103/PhysRevB.58.6224
[9]   ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS [J].
GIANNOZZI, P ;
DE GIRONCOLI, S ;
PAVONE, P ;
BARONI, S .
PHYSICAL REVIEW B, 1991, 43 (09) :7231-7242
[10]   INTERATOMIC FORCE-CONSTANTS FROM FIRST PRINCIPLES - THE CASE OF ALPHA-QUARTZ [J].
GONZE, X ;
CHARLIER, JC ;
ALLAN, DC ;
TETER, MP .
PHYSICAL REVIEW B, 1994, 50 (17) :13035-13038