Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics

被引：158

作者：

Fiorentini, V ^{[1
]}

Gulleri, G ^{[1
]}

机构：

[1] Univ Cagliari, INFM, I-09042 Monserrato, CA, Italy

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.89.266101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Parameters determining the performance of the crystalline oxides zirconia (ZrO2) and hafnia (HfO2) as gate insulators in nanometric Si electronics are estimated via ab initio calculations of the energetics, dielectric properties, and band alignment of bulk and thin-film oxides on Si (001). With their large dielectric constants, stable and low-formation-energy interfaces, large valence offsets, and reasonable (though not optimal) conduction offsets (electron injection barriers), zirconia and hafnia appear to have considerable potential as gate oxides for Si electronics.

引用

页码：266101/1 / 266101/4

页数：4

共 27 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].