Electronic inhomogeneity of heavily overdoped Bi2-xPbxSr2CuOy studied by low-temperature scanning tunneling microscopy/spectroscopy

被引：34

作者：

Mashima, H

Fukuo, N

Matsumoto, Y

Kinoda, G

Kondo, T

Ikuta, H

Hitosugi, T

Hasegawa, T

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[3] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[4] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.73.060502

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature scanning tunneling microscopy and/or scanning tunneling spectroscopy measurements of heavily overdoped Bi2-xPbxSr2CuOy have revealed nanoscale electronic inhomogeneity composed of spatial regions showing superconducting and pseudogaplike gap structures. This proves that the inhomogeneity is a general feature of Bi-based cuprates, regardless of the number of CuO2 planes. The magnitude of inhomogeneity, defined as relative standard deviation of the local gap value, is close to that of slightly overdoped Bi2Sr2CaCu2Oy, suggesting that the electronic inhomogeneity arises from excess oxygen atoms in the (BiO)(2) layers.

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页数：4

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