RF MEMS SWITCHES AND SWITCH CIRCUITS

被引：713

作者：

Rebeiz, Gabriel M. ^{[1
]}

Muldavin, Jeremy B. ^{[1
]}

机构：

[1] Univ Michigan, Ann Arbor, MI 48109 USA

来源：

IEEE MICROWAVE MAGAZINE | 2001年 / 2卷 / 04期

关键词：

D O I：

10.1109/6668.969936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The latest development in RF microelectromechanical systems (MEMS) Switches and high-isolation switch circuits are presented. RF MEMS switches offer a substantially higher performance than p-i-n or field-effect transistor (FET) diode switches and are used extensively in state-of-the-art MEMS phase shifters and switching networks up to 120 GHz. Its application areas are in phased arrays and reconfigurable apertures for defense and telecommunication systems, switching networks for satellite communications, and single-pole N-throw switches for wireless applications.

引用

页码：59 / 71

页数：13

共 36 条

[1]

[Anonymous], 2001, IEEE MTT S PHOEN AZ

[2]

Barker NS, 1998, IEEE T MICROW THEORY, V46, P1881, DOI 10.1109/22.734503

[3]

BARKER NS, 1999, THESIS U MICHIGAN AN

[4]

Bozler C, 2000, IEEE MTT S INT MICR, P153, DOI 10.1109/MWSYM.2000.860909

[5]

Feng Z., 2000, P SOL STAT SENS ACT, P1507

[6]

Feng Z., 1999, IEEE MTT S INT MICR, P255

[7]

Goldsmith C, 2001, IEEE MTT-S, P227, DOI 10.1109/MWSYM.2001.966876

[8]

Goldsmith C, 1996, IEEE MTT-S, P1141, DOI 10.1109/MWSYM.1996.511231

[9] Performance of low-loss RF MEMS capacitive switches [J].

Goldsmith, CL ;

Yao, ZM ;

Eshelman, S ;

Denniston, D .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (08) :269-271

[10]

Hyman D, 1999, INT J RF MICROW C E, V9, P348, DOI 10.1002/(SICI)1099-047X(199907)9:4<348::AID-MMCE6>3.0.CO

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