Polarization selection in VCSELs due to current carrier heating

被引：29

作者：

Ryvkin, BS ^{[1
]}

Georgievskii, AM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 07期

关键词：

D O I：

10.1134/1.1187788

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The problem of polarization switching of light from a vertical cavity surface emitting laser (VCSEL) is discussed. It is shown that heating of holes in the p-type distributed Bragg reflector and of electrons and holes in the quantum wells of the active region lead to switching of the polarization of the VCSEL. The model developed here makes it possible to explain the results of experiments on switching of the polarization of VCSELs at fixed active region temperatures. (C) 1999 American Institute of Physics. [S1063-7826(99)02507-7].

引用

页码：813 / 819

页数：7

共 21 条

[1]

[Anonymous], 2021, VERTICAL EXTERNAL CA, DOI DOI 10.1002/9783527807956

[2] DETERMINATION OF HOT CARRIER DISTRIBUTION FUNCTION FROM ANISOTROPIC INFRARED ABSORPTION IN P-TYPE GERMANIUM [J].

BRAY, R ;

PINSON, WE .

PHYSICAL REVIEW LETTERS, 1963, 11 (06) :268-+

[3] POLARIZATION MODULATION OF CRUCIFORM VERTICAL-CAVITY LASER-DIODES [J].

CHOQUETTE, KD ;

LEAR, KL ;

LEIBENGUTH, RE ;

ASOM, MT .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2767-2769

[4] TEMPERATURE-DEPENDENCE OF GAIN-GUIDED VERTICAL-CAVITY SURFACE-EMITTING LASER POLARIZATION [J].

CHOQUETTE, KD ;

RICHIE, DA ;

LEIBENGUTH, RE .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2062-2064

[5] ABSORPTION FROM NEUTRAL ACCEPTORS IN GAAS AND GAP [J].

CHRISTENSEN, O .

PHYSICAL REVIEW B, 1973, 7 (04) :1426-1432

[6]

Coldren L. A., 2012, DIODE LASERS PHOTONI, V218

[7]

ERNEUX T, 1999, PHYS REV A, V59

[8] THEORY OF THE INFRARED ABSORPTION OF CARRIERS IN GERMANIUM AND SILICON [J].

KAHN, AH .

PHYSICAL REVIEW, 1955, 97 (06) :1647-1652

[9]

Kaliteevskii M. A., 1995, Physics of the Solid State, V37, P1497

[10]

KAZARINOV RF, 1973, SOV PHYS SEMICOND+, V7, P525

← 1 2 3 →