Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements

被引：13

作者：

Grabowski, A

Nowak, M

Tzanetakis, P

机构：

[1] SILESIAN TECH UNIV, INST PHYS, PL-40019 KATOWICE, POLAND

[2] UNIV CRETE, INST PHYS, IRAKLION 71110, CRETE, GREECE

来源：

THIN SOLID FILMS | 1996年 / 283卷 / 1-2期

关键词：

amorphous silicon; optical properties; photoconductivity; semiconductors;

D O I：

10.1016/0040-6090(95)08558-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The non-linear dependence of photoconductivity (PC) on wavelength and intensity of illumination was used to evaluate the lifetime and quantum efficiency coefficient of carrier photogeneration in RF sputtered thin films of a-Si:H. The change of spatial distribution of radiation intensity over the sample thickness with the change of photon energy has been taken into account. Due to this, for the photon energies greater than the semiconductor energy gap, the decay of PC with an increase of absorption coefficient of radiation could be described using only one recombination parameter: the lifetime factor proportional to carrier lifetime. The comparison of the values of absorption coefficient obtained from the measurements of optical transmittance, CPM and the quantum efficiency coefficient is presented. The determination of carrier lifetime as a function of energy of photons that generate the free carriers is discussed.

引用

页码：75 / 80

页数：6