Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors

被引：50

作者：

Cho, Song Yun ^{[1
]}

Kang, Young Hun ^{[1
]}

Jung, Jun-Young ^{[2
]}

Nam, So Youn ^{[1
]}

Lim, Jongsun ^{[1
]}

Yoon, Sung Cheol ^{[1
]}

Choi, Dong Hoon ^{[2
]}

Lee, Changjin ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Div Adv Mat, Taejon 305600, South Korea

[2] Korea Univ, Dept Chem, Seoul 136701, South Korea

来源：

CHEMISTRY OF MATERIALS | 2012年 / 24卷 / 18期

关键词：

thin-film transistor; zinc oxide; nanoparticle/precursor ink; low-temperature process; HIGH-PERFORMANCE; ZNO NANORODS; FABRICATION; GROWTH;

D O I：

10.1021/cm2036234

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm(2) V-1 s(-1) and an on/off ratio of 5.89 x 10(8) even at low processing temperature of 250 degrees C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.

引用

页码：3517 / 3524

页数：8

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