Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles

被引：98

作者：

Faber, Hendrik ^{[1
]}

Burkhardt, Martin ^{[1
]}

Jedaa, Abdesselam ^{[1
]}

Kaelblein, Daniel ^{[2
]}

Klauk, Hagen ^{[2
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Polymer Mat, D-91058 Erlangen, Germany

[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 30期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; GATE DIELECTRICS; N-CHANNEL; ZNO; PERFORMANCE; ELECTRONICS; POLYMER; NANORODS;

D O I：

10.1002/adma.200900440

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on thin-film transistors based on ZnO nanoparticles processed from solution and with a maximum temperature of 100 degrees C. Electron mobilities up to 2.5 cm(2)V(-1)s(-1) are obtained, and top-gate TFTs show non-volatile memory properties with a large, stable hysteresis and a memory ratio of 10(5). Memory TFTs operate in ambient, have good shelf-life (>6 months), and useful endurance properties.

引用

页码：3099 / +

页数：7

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