Microfabricated field emission devices using carbon nanofibers as cathode elements
被引:33
作者:
Guillorn, MA
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机构:
Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Guillorn, MA
[1
]
Melechko, AV
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机构:Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Melechko, AV
Merkulov, VI
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机构:Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Merkulov, VI
Ellis, ED
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机构:Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Ellis, ED
Simpson, ML
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机构:Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Simpson, ML
Baylor, LR
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机构:Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Baylor, LR
Bordonaro, GJ
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机构:Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
Bordonaro, GJ
机构:
[1] Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Knoxville, TN 37996 USA
[3] Oak Ridge Natl Lab, Div Fus Energy, Oak Ridge, TN 37831 USA
[4] Cornell Univ, Cornell Nanofabricat Facil, Ithaca, NY 14853 USA
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
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2001年
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19卷
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06期
关键词:
D O I:
10.1116/1.1420201
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The digital electrostatic electron beam array lithography concept under development at the Oak Ridge National Laboratory proposes performing direct write electron beam lithography with a massively parallel array of electron emitters operating simultaneously within a digitally programmable microfabricated field emitter array (FEA). Recently we have concentrated our research efforts on the field emission (FE) properties of deterministically grown vertically aligned carbon nanofibers (VACNFs). We have measured the FE properties of isolated VACNFs using a moveable current probe and found that they have low FE turn-on fields and can achieve stable emission for extended periods of time in moderate vacuum. In order to use the VACNF in microfabricated FEA devices we have subjected them to a variety of processing phenomenon including reactive ion etching and plasma enhanced chemical vapor deposition, and found them to be quite robust. Using these processes we have fabricated operational gated cathode structures with sin-le VACNFs cathodes. The issues involved in this fabrication process and the performance of these devices are discussed. (C) 2001 American Vacuum Society.