InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

被引：8

作者：

Ahmari, DA

Fresina, MT

Hartmann, QJ

Barlage, DW

Feng, M

Stillman, GE

机构：

[1] Dept. of Elec. and Comp. Engineering, Microelectronics Laboratory, University of Illinois, Urbana

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期

关键词：

D O I：

10.1109/55.641445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve electrical isolation and simplify the heterojunction bipolar transistor (HBT) fabrication process, a semi-insulating InGaP buffer layer has been employed in an InGaP/GaAs HBT, Data is presented that demonstrates this buffer layer serves as an excellent isolation material, In addition, high-frequency HBT's have been fabricated and characterized to show that the buffer layer does not degrade device performance.

引用

收藏

页码：559 / 561

页数：3

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