WIDEBAND MODULATION OF 1.3 MU-M INGAASP BURIED CRESCENT LASERS WITH IRON-DOPED AND COBALT-DOPED SERMI-INSULATING CURRENT BLOCKING LAYERS

被引：19

作者：

CHENG, WH ^{[1
]}

HUANG, SY ^{[1
]}

APPELBAUM, A ^{[1
]}

POOLADDEJ, J ^{[1
]}

BUEHRING, KD ^{[1
]}

WOLF, D ^{[1
]}

RENNER, DS ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1353 / 1361

页数：9

共 32 条

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[8] 1.3 MU-M INGAASP BURIED CRESCENT LASERS WITH COBALT-DOPED SEMI-INSULATING CURRENT BLOCKING LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[9] DYNAMIC CHARACTERISTICS OF SEMI-INSULATING CURRENT BLOCKING LAYERS - APPLICATION TO MODULATION PERFORMANCE OF 1.3-MU-M INGAASP LASERS
CHENG, WH
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ZEHR, SW
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1570 - 1573
[10] HIGH-SPEED AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT BLOCKING LAYERS
CHENG, WH
SU, CB
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ZEHR, SW
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1783 - 1785

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