HIGH-SPEED AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT BLOCKING LAYERS

被引：18

作者：

CHENG, WH ^{[1
]}

SU, CB ^{[1
]}

BUEHRING, KD ^{[1
]}

HUANG, SY ^{[1
]}

POOLADDEJ, J ^{[1
]}

WOLF, D ^{[1
]}

PERRACHIONE, D ^{[1
]}

RENNER, D ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1783 / 1785

页数：3

共 11 条

[1] SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .2. DEEP LEVELS OF FE FROM THE STUDY OF P+-SEMI-INSULATING-N+ DIODES
CHENG, J
FORREST, SR
TELL, B
WILT, D
SCHWARTZ, B
WRIGHT, P
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1787 - 1797
[2] SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .1. CURRENT-LIMITING PROPERTIES OF N+-SEMI-INSULATING-N+ STRUCTURES
CHENG, J
FORREST, SR
TELL, B
WILT, D
SCHWARTZ, B
WRIGHT, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1780 - 1786
[3] LOW-THRESHOLD AND WIDE-BANDWIDTH 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYERS
CHENG, WH
SU, CB
BUEHRING, KD
URE, JW
PERRACHIONE, D
RENNER, D
HESS, KL
ZEHR, SW
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 155 - 157
[4] INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS
DUTTA, NK
ZILKO, JL
CELLA, T
ACKERMAN, DA
SHEN, TM
NAPHOLTZ, SG
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1572 - 1573
[5] SEMIINSULATING INP GROWN BY LOW-PRESSURE MOCVD
HESS, KL
ZEHR, SW
CHENG, WH
PERRACHIONE, D
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) : 127 - 131
[6] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MACRANDER, AT
LONG, JA
RIGGS, VG
BLOEMEKE, AF
JOHNSTON, WD
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1297 - 1298
[7] PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS
SUGOU, S
KATO, Y
NISHIMOTO, H
KASAHARA, K
[J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1214 - 1215
[8] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
TANAKA, K
HOSHINO, M
WAKAO, K
KOMENO, J
ISHIKAWA, H
YAMAKOSHI, S
IMAI, H
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1127 - 1129
[9] INGAASP/INP PLANAR BURIED HETEROSTRUCTURE LASERS WITH SEMIINSULATING INP CURRENT BLOCKING LAYERS GROWN BY MOCVD
WAKAO, K
NAKAI, K
SANADA, T
KUNO, M
ODAGAWA, T
YAMAKOSHI, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 943 - 947
[10] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH
WILT, DP
LONG, J
DAUTREMONTSMITH, WC
FOCHT, MW
SHEN, TM
HARTMAN, RL
[J]. ELECTRONICS LETTERS, 1986, 22 (16) : 869 - 870

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