SEMIINSULATING INP GROWN BY LOW-PRESSURE MOCVD

被引：12

作者：

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

CHENG, WH ^{[1
]}

PERRACHIONE, D ^{[1
]}

机构：

[1] ROCKWELL INT CORP,COLLINS TRANSMISS SYST DIV,RICHARDSON,TX 75081

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 02期

关键词：

D O I：

10.1007/BF02654300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：127 / 131

页数：5

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