HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION

被引：39

作者：

DONNELLY, JP

HURWITZ, CE

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90282-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：475 / 478

页数：4

相关论文

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