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LOW-THRESHOLD AND WIDE-BANDWIDTH 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYERS
被引:15
作者
:
CHENG, WH
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
CHENG, WH
[
1
]
SU, CB
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
SU, CB
[
1
]
BUEHRING, KD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
BUEHRING, KD
[
1
]
URE, JW
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
URE, JW
[
1
]
PERRACHIONE, D
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
PERRACHIONE, D
[
1
]
RENNER, D
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
RENNER, D
[
1
]
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
HESS, KL
[
1
]
ZEHR, SW
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
ZEHR, SW
[
1
]
机构
:
[1]
ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
来源
:
APPLIED PHYSICS LETTERS
|
1987年
/ 51卷
/ 03期
关键词
:
D O I
:
10.1063/1.98906
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:155 / 157
页数:3
相关论文
共 8 条
[1]
SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .1. CURRENT-LIMITING PROPERTIES OF N+-SEMI-INSULATING-N+ STRUCTURES
CHENG, J
论文数:
0
引用数:
0
h-index:
0
CHENG, J
FORREST, SR
论文数:
0
引用数:
0
h-index:
0
FORREST, SR
TELL, B
论文数:
0
引用数:
0
h-index:
0
TELL, B
WILT, D
论文数:
0
引用数:
0
h-index:
0
WILT, D
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
WRIGHT, PD
论文数:
0
引用数:
0
h-index:
0
WRIGHT, PD
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(05)
: 1780
-
1786
[2]
CHENG W, 1986, APPL PHYS LETT, V49, P1416
[3]
INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
ZILKO, JL
论文数:
0
引用数:
0
h-index:
0
ZILKO, JL
CELLA, T
论文数:
0
引用数:
0
h-index:
0
CELLA, T
ACKERMAN, DA
论文数:
0
引用数:
0
h-index:
0
ACKERMAN, DA
SHEN, TM
论文数:
0
引用数:
0
h-index:
0
SHEN, TM
NAPHOLTZ, SG
论文数:
0
引用数:
0
h-index:
0
NAPHOLTZ, SG
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(23)
: 1572
-
1573
[4]
ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MACRANDER, AT
论文数:
0
引用数:
0
h-index:
0
MACRANDER, AT
LONG, JA
论文数:
0
引用数:
0
h-index:
0
LONG, JA
RIGGS, VG
论文数:
0
引用数:
0
h-index:
0
RIGGS, VG
BLOEMEKE, AF
论文数:
0
引用数:
0
h-index:
0
BLOEMEKE, AF
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, WD
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(12)
: 1297
-
1298
[5]
PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS
SUGOU, S
论文数:
0
引用数:
0
h-index:
0
SUGOU, S
KATO, Y
论文数:
0
引用数:
0
h-index:
0
KATO, Y
NISHIMOTO, H
论文数:
0
引用数:
0
h-index:
0
NISHIMOTO, H
KASAHARA, K
论文数:
0
引用数:
0
h-index:
0
KASAHARA, K
[J].
ELECTRONICS LETTERS,
1986,
22
(23)
: 1214
-
1215
[6]
SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
TANAKA, K
HOSHINO, M
论文数:
0
引用数:
0
h-index:
0
HOSHINO, M
WAKAO, K
论文数:
0
引用数:
0
h-index:
0
WAKAO, K
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
KOMENO, J
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
IMAI, H
论文数:
0
引用数:
0
h-index:
0
IMAI, H
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(11)
: 1127
-
1129
[7]
CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH
WILT, DP
论文数:
0
引用数:
0
h-index:
0
WILT, DP
LONG, J
论文数:
0
引用数:
0
h-index:
0
LONG, J
DAUTREMONTSMITH, WC
论文数:
0
引用数:
0
h-index:
0
DAUTREMONTSMITH, WC
FOCHT, MW
论文数:
0
引用数:
0
h-index:
0
FOCHT, MW
SHEN, TM
论文数:
0
引用数:
0
h-index:
0
SHEN, TM
HARTMAN, RL
论文数:
0
引用数:
0
h-index:
0
HARTMAN, RL
[J].
ELECTRONICS LETTERS,
1986,
22
(16)
: 869
-
870
[8]
WIDE-BANDWIDTH AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH SEMIINSULATING FE-DOPED INP CURRENT BLOCKING LAYERS
ZAH, CE
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
ZAH, CE
OSINSKI, JS
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
OSINSKI, JS
MENOCAL, SG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
MENOCAL, SG
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
TABATABAIE, N
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
LEE, TP
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
DENTAI, AG
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BURRUS, CA
[J].
ELECTRONICS LETTERS,
1987,
23
(01)
: 52
-
53
←
1
→
共 8 条
[1]
SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .1. CURRENT-LIMITING PROPERTIES OF N+-SEMI-INSULATING-N+ STRUCTURES
CHENG, J
论文数:
0
引用数:
0
h-index:
0
CHENG, J
FORREST, SR
论文数:
0
引用数:
0
h-index:
0
FORREST, SR
TELL, B
论文数:
0
引用数:
0
h-index:
0
TELL, B
WILT, D
论文数:
0
引用数:
0
h-index:
0
WILT, D
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
WRIGHT, PD
论文数:
0
引用数:
0
h-index:
0
WRIGHT, PD
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(05)
: 1780
-
1786
[2]
CHENG W, 1986, APPL PHYS LETT, V49, P1416
[3]
INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
ZILKO, JL
论文数:
0
引用数:
0
h-index:
0
ZILKO, JL
CELLA, T
论文数:
0
引用数:
0
h-index:
0
CELLA, T
ACKERMAN, DA
论文数:
0
引用数:
0
h-index:
0
ACKERMAN, DA
SHEN, TM
论文数:
0
引用数:
0
h-index:
0
SHEN, TM
NAPHOLTZ, SG
论文数:
0
引用数:
0
h-index:
0
NAPHOLTZ, SG
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(23)
: 1572
-
1573
[4]
ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MACRANDER, AT
论文数:
0
引用数:
0
h-index:
0
MACRANDER, AT
LONG, JA
论文数:
0
引用数:
0
h-index:
0
LONG, JA
RIGGS, VG
论文数:
0
引用数:
0
h-index:
0
RIGGS, VG
BLOEMEKE, AF
论文数:
0
引用数:
0
h-index:
0
BLOEMEKE, AF
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, WD
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(12)
: 1297
-
1298
[5]
PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS
SUGOU, S
论文数:
0
引用数:
0
h-index:
0
SUGOU, S
KATO, Y
论文数:
0
引用数:
0
h-index:
0
KATO, Y
NISHIMOTO, H
论文数:
0
引用数:
0
h-index:
0
NISHIMOTO, H
KASAHARA, K
论文数:
0
引用数:
0
h-index:
0
KASAHARA, K
[J].
ELECTRONICS LETTERS,
1986,
22
(23)
: 1214
-
1215
[6]
SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
TANAKA, K
HOSHINO, M
论文数:
0
引用数:
0
h-index:
0
HOSHINO, M
WAKAO, K
论文数:
0
引用数:
0
h-index:
0
WAKAO, K
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
KOMENO, J
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
IMAI, H
论文数:
0
引用数:
0
h-index:
0
IMAI, H
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(11)
: 1127
-
1129
[7]
CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH
WILT, DP
论文数:
0
引用数:
0
h-index:
0
WILT, DP
LONG, J
论文数:
0
引用数:
0
h-index:
0
LONG, J
DAUTREMONTSMITH, WC
论文数:
0
引用数:
0
h-index:
0
DAUTREMONTSMITH, WC
FOCHT, MW
论文数:
0
引用数:
0
h-index:
0
FOCHT, MW
SHEN, TM
论文数:
0
引用数:
0
h-index:
0
SHEN, TM
HARTMAN, RL
论文数:
0
引用数:
0
h-index:
0
HARTMAN, RL
[J].
ELECTRONICS LETTERS,
1986,
22
(16)
: 869
-
870
[8]
WIDE-BANDWIDTH AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH SEMIINSULATING FE-DOPED INP CURRENT BLOCKING LAYERS
ZAH, CE
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
ZAH, CE
OSINSKI, JS
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
OSINSKI, JS
MENOCAL, SG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
MENOCAL, SG
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
TABATABAIE, N
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
LEE, TP
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
DENTAI, AG
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BURRUS, CA
[J].
ELECTRONICS LETTERS,
1987,
23
(01)
: 52
-
53
←
1
→