WIDE-BANDWIDTH AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH SEMIINSULATING FE-DOPED INP CURRENT BLOCKING LAYERS

被引：13

作者：

ZAH, CE ^{[1
]}

OSINSKI, JS ^{[1
]}

MENOCAL, SG ^{[1
]}

TABATABAIE, N ^{[1
]}

LEE, TP ^{[1
]}

DENTAI, AG ^{[1
]}

BURRUS, CA ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 01期

关键词：

D O I：

10.1049/el:19870038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：52 / 53

页数：2

共 5 条

[1]

ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310

[2] INGAASP/INP BURIED CRESCENT LASER DIODE EMITTING AT 1.3 MU-M WAVELENGTH [J].

OOMURA, E ;

HIGUCHI, H ;

SAKAKIBARA, Y ;

HIRANO, R ;

NAMIZAKI, H ;

SUSAKI, W ;

IKEDA, K ;

FUJIKAWA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :866-874

[3] HIGH-POWER 1.3-MUM INGAASP P-SUBSTRATE BURIED CRESCENT LASERS [J].

SAKAKIBARA, Y ;

HIGUCHI, H ;

OOMURA, E ;

NAKAJIMA, Y ;

YAMAMOTO, Y ;

GOTO, K ;

NAMIZAKI, H ;

IKEDA, K ;

SUSAKI, W .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (05) :978-984

[4] HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS [J].

TUCKER, RS ;

KAMINOW, IP .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (04) :385-393

[5] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH [J].

WILT, DP ;

LONG, J ;

DAUTREMONTSMITH, WC ;

FOCHT, MW ;

SHEN, TM ;

HARTMAN, RL .

ELECTRONICS LETTERS, 1986, 22 (16) :869-870

← 1 →