HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS

被引：154

作者：

TUCKER, RS ^{[1
]}

KAMINOW, IP ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1109/JLT.1984.1073654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：385 / 393

页数：9

共 26 条

[1] INFLUENCE OF SPECTRAL HOLE-BURNING ON QUATERNARY LASER TRANSIENTS
ADAMS, MJ
OSINSKI, M
[J]. ELECTRONICS LETTERS, 1983, 19 (16) : 627 - 628
[2] EFFECT OF GAIN SATURATION ON INJECTION-LASER SWITCHING
CHANNIN, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 3858 - 3860
[3] DUTTA NK, 1984, J LIGHTWAVE TECHNOL, V2, P201
[4] HIGH-FREQUENCY CHARACTERISTICS OF GAAIAS INJECTION-LASERS
FIGUEROA, L
SLAYMAN, CW
YEN, HW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) : 1718 - 1727
[5] REDUCTION OF RESONANCE-LIKE PEAK IN DIRECT MODULATION DUE TO CARRIER DIFFUSION IN INJECTION-LASER
FURUYA, K
SUEMATSU, Y
HONG, T
[J]. APPLIED OPTICS, 1978, 17 (12): : 1949 - 1952
[6] 4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS
HAGIMOTO, K
OHTA, N
NAKAGAWA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 796 - 798
[7] LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M
KAMINOW, IP
STULZ, LW
KO, JS
DENTAI, AG
NAHORY, RE
DEWINTER, JC
HARTMAN, RL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1312 - 1319
[8] LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M
KAMINOW, IP
STULZ, LW
KO, JS
MILLER, BI
FELDMAN, RD
DEWINTER, JC
POLLACK, MA
[J]. ELECTRONICS LETTERS, 1983, 19 (21) : 877 - 879
[9] HIGH-SPEED 1.55 MU-M SINGLE-LONGITUDINAL-MODE RIDGE WAVEGUIDE C-3 LASER
KAMINOW, IP
KO, JS
LINKE, RA
STULZ, LW
[J]. ELECTRONICS LETTERS, 1983, 19 (19) : 784 - 785
[10] LONGITUDINAL MODE SELF-STABILIZATION IN SEMICONDUCTOR-LASERS
KAZARINOV, RF
HENRY, CH
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4631 - 4644

← 1 2 3 →