学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
LONGITUDINAL MODE SELF-STABILIZATION IN SEMICONDUCTOR-LASERS
被引:157
作者
:
KAZARINOV, RF
论文数:
0
引用数:
0
h-index:
0
KAZARINOV, RF
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1982年
/ 53卷
/ 07期
关键词
:
D O I
:
10.1063/1.331290
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4631 / 4644
页数:14
相关论文
共 17 条
[1]
SINGLE-MODE STABILIZATION BY TRAPS IN SEMICONDUCTOR-LASERS
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
COPELAND, JA
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(07)
: 721
-
727
[2]
SPECTRAL CHARACTERISTICS OF EXTERNAL-CAVITY CONTROLLED SEMICONDUCTOR-LASERS
FLEMING, MW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
FLEMING, MW
MOORADIAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MOORADIAN, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(01)
: 44
-
59
[3]
GLOVER GH, 1972, APPL PHYS LETT, V21, P409, DOI 10.1063/1.1654433
[4]
SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
MERRITT, FR
论文数:
0
引用数:
0
h-index:
0
MERRITT, FR
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(11)
: 2196
-
2204
[5]
MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
MERRITT, FR
论文数:
0
引用数:
0
h-index:
0
MERRITT, FR
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(06)
: 3042
-
3050
[6]
TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LANG, DV
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LOGAN, RA
JAROS, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
JAROS, M
[J].
PHYSICAL REVIEW B,
1979,
19
(02)
: 1015
-
1030
[7]
LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS
NAKAMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
NAKAMURA, M
AIKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
AIKI, K
CHINONE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
CHINONE, N
ITO, R
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
ITO, R
UMEDA, J
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
UMEDA, J
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(09)
: 4644
-
4648
[8]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[9]
SPECTRAL HOLE-BURNING AND NONLINEAR-GAIN DECREASE IN A BAND-TO-LEVEL TRANSITION SEMICONDUCTOR LASER
NISHIMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NISHIMURA, Y
NISHIMUR.Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NISHIMUR.Y
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1973,
QE 9
(10)
: 1011
-
1019
[10]
ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS
NISHIMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NISHIMURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(01)
: 109
-
117
←
1
2
→
共 17 条
[1]
SINGLE-MODE STABILIZATION BY TRAPS IN SEMICONDUCTOR-LASERS
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
COPELAND, JA
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(07)
: 721
-
727
[2]
SPECTRAL CHARACTERISTICS OF EXTERNAL-CAVITY CONTROLLED SEMICONDUCTOR-LASERS
FLEMING, MW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
FLEMING, MW
MOORADIAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MOORADIAN, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(01)
: 44
-
59
[3]
GLOVER GH, 1972, APPL PHYS LETT, V21, P409, DOI 10.1063/1.1654433
[4]
SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
MERRITT, FR
论文数:
0
引用数:
0
h-index:
0
MERRITT, FR
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(11)
: 2196
-
2204
[5]
MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
MERRITT, FR
论文数:
0
引用数:
0
h-index:
0
MERRITT, FR
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(06)
: 3042
-
3050
[6]
TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LANG, DV
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
LOGAN, RA
JAROS, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA
JAROS, M
[J].
PHYSICAL REVIEW B,
1979,
19
(02)
: 1015
-
1030
[7]
LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS
NAKAMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
NAKAMURA, M
AIKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
AIKI, K
CHINONE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
CHINONE, N
ITO, R
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
ITO, R
UMEDA, J
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185
UMEDA, J
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(09)
: 4644
-
4648
[8]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[9]
SPECTRAL HOLE-BURNING AND NONLINEAR-GAIN DECREASE IN A BAND-TO-LEVEL TRANSITION SEMICONDUCTOR LASER
NISHIMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NISHIMURA, Y
NISHIMUR.Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NIKKEI ELECTR, EDITORIAL DEPT, TOKYO, JAPAN
NISHIMUR.Y
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1973,
QE 9
(10)
: 1011
-
1019
[10]
ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS
NISHIMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NISHIMURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(01)
: 109
-
117
←
1
2
→