HIGH-POWER 1.3-MUM INGAASP P-SUBSTRATE BURIED CRESCENT LASERS

被引：36

作者：

SAKAKIBARA, Y

HIGUCHI, H

OOMURA, E

NAKAJIMA, Y

YAMAMOTO, Y

GOTO, K

NAMIZAKI, H

IKEDA, K

SUSAKI, W

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1985年 / 3卷 / 05期

关键词：

D O I：

10.1109/JLT.1985.1074329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：978 / 984

页数：7

共 14 条

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[3]

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[6] HIGH-POWER OUTPUT, LOW THRESHOLD, INNER STRIPE GAINASP LASER DIODE ON A P-TYPE INP SUBSTRATE [J].

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