ABNORMALITY AT THE INTERFACE OF PARA-TYPE INP GROWN BY LPE

被引:5
作者
NAKANO, Y
TAKAHEI, K
NOGUCHI, Y
NAGAI, H
NAWATA, K
机构
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D O I
10.1143/JJAP.20.L619
中图分类号
O59 [应用物理学];
学科分类号
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页码:L619 / L622
页数:4
相关论文
共 3 条
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NAGAI, H ;
NOGUCHI, Y ;
TAKAHEI, K ;
TOYOSHIMA, Y ;
IWANE, G .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L218-L220
[2]   1.5-MU-M INGAASP-INP BH LASERS ON P-TYPE INP SUBSTRATES [J].
NAKANO, Y ;
TAKAHEI, KI ;
NOGUCHI, Y ;
TOKUNAGA, M ;
NAGAI, H ;
NAWATA, K ;
FUJIMOTO, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L612-L614
[3]   LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER [J].
TAKAHEI, K ;
HAGAI, H ;
KAWAGUCHI, H .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :309-310