PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS

被引：16

作者：

SUGOU, S

KATO, Y

NISHIMOTO, H

KASAHARA, K

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 23期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS - Growth;

D O I：

10.1049/el:19860832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and lasing characteristics for planar surface buried-heterostructure InGaAsP/InP lasers with highly resistive current-blocking layers are reported. Embedding growth was successfully performed by Fe-doping hydride VPE. Single transverse mode operation has been realized in lasers with a narrow active region, without any nonradiative recombination increase, due to an Fe-associated deep level. High-frequency response up to 10 GHz was also demonstrated.

引用

页码：1214 / 1215

页数：2

共 5 条

[1] SELECTIVE GROWTH OF INP BURIED STRUCTURE BY CHLORIDE VAPOR-PHASE EPITAXY
HOSHINO, M
TANAKA, K
KOMENO, J
KITAHARA, K
KODAMA, K
OZEKI, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 186 - 188
[2] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD
LONG, JA
RIGGS, VG
JOHNSTON, WD
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 10 - 14
[3] MILLER BI, 1985, P OFC 86, P37
[4] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD
MIZUTANI, T
YOSHIDA, M
USUI, A
WATANABE, H
YUASA, T
HAYASHI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L113 - L116
[5] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
TANAKA, K
HOSHINO, M
WAKAO, K
KOMENO, J
ISHIKAWA, H
YAMAKOSHI, S
IMAI, H
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1127 - 1129

← 1 →