SELECTIVE GROWTH OF INP BURIED STRUCTURE BY CHLORIDE VAPOR-PHASE EPITAXY

被引：17

作者：

HOSHINO, M

TANAKA, K

KOMENO, J

KITAHARA, K

KODAMA, K

OZEKI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：186 / 188

页数：3

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