1.3 MU-M INGAASP BURIED CRESCENT LASERS WITH COBALT-DOPED SEMI-INSULATING CURRENT BLOCKING LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

CHENG, WH ^{[1
]}

POOLADDEJ, J ^{[1
]}

HUANG, SY ^{[1
]}

BUEHRING, KD ^{[1
]}

APPELBAUM, A ^{[1
]}

WOLF, D ^{[1
]}

RENNER, D ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期

关键词：

D O I：

10.1063/1.99994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1257 / 1259

页数：3

共 10 条

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[2] HIGH-SPEED AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT BLOCKING LAYERS [J].

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[3] LOW THRESHOLD 1.51-MU-M INGAASP BURINED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYER [J].

CHENG, WH ;

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URE, JW ;

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[4] THE SINGLE-CRYSTAL GROWTH AND ELECTRICAL-PROPERTIES OF COBALT-DOPED INDIUM-PHOSPHIDE [J].

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[5]

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[6]

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[7]

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[8] HIGH-RESISTIVITY (GREATER-THAN-10(5)-OMEGA-CM) INP LAYERS BY LIQUID-PHASE EPITAXY [J].

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[9] BH INGAASP LASERS WITH AN LPE GROWN SEMIINSULATING LAYER [J].

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YU, PKL .

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[10] THE IDENTIFICATION OF PRECIPITATE PHASES IN FE-DOPED INP SINGLE-CRYSTALS [J].

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