LOW THRESHOLD 1.51-MU-M INGAASP BURINED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYER

被引：5

作者：

CHENG, WH ^{[1
]}

SU, CB ^{[1
]}

BUEHRING, KD ^{[1
]}

CHIEN, CP ^{[1
]}

URE, JW ^{[1
]}

PERRACHIONE, D ^{[1
]}

RENNER, D ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1415 / 1417

页数：3

共 5 条

[1] INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS [J].

DUTTA, NK ;

ZILKO, JL ;

CELLA, T ;

ACKERMAN, DA ;

SHEN, TM ;

NAPHOLTZ, SG .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1572-1573

[2] PLANAR BURIED HETEROSTRUCTURE INP GAINAS LASERS GROWN ENTIRELY BY OMVPE [J].

MILLER, BI ;

KOREN, U ;

CAPIK, RJ .

ELECTRONICS LETTERS, 1986, 22 (18) :947-949

[3] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER [J].

TANAKA, K ;

HOSHINO, M ;

WAKAO, K ;

KOMENO, J ;

ISHIKAWA, H ;

YAMAKOSHI, S ;

IMAI, H .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1127-1129

[4] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER EMPLOYING A BURIED FE ION IMPLANT FOR CURRENT CONFINEMENT [J].

WILT, DP ;

SCHWARTZ, B ;

TELL, B ;

BEEBE, ED ;

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :290-292

[5] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH [J].

WILT, DP ;

LONG, J ;

DAUTREMONTSMITH, WC ;

FOCHT, MW ;

SHEN, TM ;

HARTMAN, RL .

ELECTRONICS LETTERS, 1986, 22 (16) :869-870

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