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CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER EMPLOYING A BURIED FE ION IMPLANT FOR CURRENT CONFINEMENT
被引:24
作者
:
WILT, DP
论文数:
0
引用数:
0
h-index:
0
WILT, DP
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
TELL, B
论文数:
0
引用数:
0
h-index:
0
TELL, B
BEEBE, ED
论文数:
0
引用数:
0
h-index:
0
BEEBE, ED
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1984年
/ 44卷
/ 03期
关键词
:
D O I
:
10.1063/1.94728
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:290 / 292
页数:3
相关论文
共 17 条
[1]
ENHANCED INDIUM-PHOSPHIDE SUBSTRATE PROTECTION FOR LIQUID-PHASE EPITAXY GROWTH OF INDIUM-GALLIUM-ARSENIDE-PHOSPHIDE DOUBLE HETEROSTRUCTURE LASERS
BESOMI, P
论文数:
0
引用数:
0
h-index:
0
BESOMI, P
WILSON, RB
论文数:
0
引用数:
0
h-index:
0
WILSON, RB
WAGNER, WR
论文数:
0
引用数:
0
h-index:
0
WAGNER, WR
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(02)
: 535
-
539
[2]
OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS
BLUM, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLUM, JM
MCGRODDY, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MCGRODDY, JC
MCMULLIN, PG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MCMULLIN, PG
SHIH, KK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SHIH, KK
SMITH, AW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SMITH, AW
ZIEGLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ZIEGLER, JF
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 413
-
418
[3]
Borghini N., UNPUB
[4]
HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
HURWITZ, CE
论文数:
0
引用数:
0
h-index:
0
HURWITZ, CE
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(02)
: 475
-
478
[5]
HIGH-RESISTIVITY IN P-TYPE INP BY DEUTERON BOMBARDMENT
FOCHT, MW
论文数:
0
引用数:
0
h-index:
0
FOCHT, MW
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(11)
: 970
-
972
[6]
GROTE N, 1979, I PHYS C SER, V45, P484
[7]
V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER BY ONE-STEP EPITAXY
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
IMAI, H
论文数:
0
引用数:
0
h-index:
0
IMAI, H
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
UMEBU, I
HORI, K
论文数:
0
引用数:
0
h-index:
0
HORI, K
TAKUSAGAWA, M
论文数:
0
引用数:
0
h-index:
0
TAKUSAGAWA, M
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(04)
: 2851
-
2853
[8]
ISHIKAWA H, 1981, ELECTRON LETT, V17, P415
[9]
INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
VANDERZIEL, JP
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
[J].
ELECTRONICS LETTERS,
1982,
18
(20)
: 895
-
896
[10]
SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA-EX IN 1-3 MU-M INGAASP DH LASERS
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
SAKAKIBARA, Y
论文数:
0
引用数:
0
h-index:
0
SAKAKIBARA, Y
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
[J].
ELECTRONICS LETTERS,
1982,
18
(16)
: 703
-
704
←
1
2
→
共 17 条
[1]
ENHANCED INDIUM-PHOSPHIDE SUBSTRATE PROTECTION FOR LIQUID-PHASE EPITAXY GROWTH OF INDIUM-GALLIUM-ARSENIDE-PHOSPHIDE DOUBLE HETEROSTRUCTURE LASERS
BESOMI, P
论文数:
0
引用数:
0
h-index:
0
BESOMI, P
WILSON, RB
论文数:
0
引用数:
0
h-index:
0
WILSON, RB
WAGNER, WR
论文数:
0
引用数:
0
h-index:
0
WAGNER, WR
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(02)
: 535
-
539
[2]
OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS
BLUM, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLUM, JM
MCGRODDY, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MCGRODDY, JC
MCMULLIN, PG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MCMULLIN, PG
SHIH, KK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SHIH, KK
SMITH, AW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SMITH, AW
ZIEGLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ZIEGLER, JF
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 413
-
418
[3]
Borghini N., UNPUB
[4]
HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
HURWITZ, CE
论文数:
0
引用数:
0
h-index:
0
HURWITZ, CE
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(02)
: 475
-
478
[5]
HIGH-RESISTIVITY IN P-TYPE INP BY DEUTERON BOMBARDMENT
FOCHT, MW
论文数:
0
引用数:
0
h-index:
0
FOCHT, MW
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(11)
: 970
-
972
[6]
GROTE N, 1979, I PHYS C SER, V45, P484
[7]
V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER BY ONE-STEP EPITAXY
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
IMAI, H
论文数:
0
引用数:
0
h-index:
0
IMAI, H
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
UMEBU, I
HORI, K
论文数:
0
引用数:
0
h-index:
0
HORI, K
TAKUSAGAWA, M
论文数:
0
引用数:
0
h-index:
0
TAKUSAGAWA, M
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(04)
: 2851
-
2853
[8]
ISHIKAWA H, 1981, ELECTRON LETT, V17, P415
[9]
INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
VANDERZIEL, JP
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
[J].
ELECTRONICS LETTERS,
1982,
18
(20)
: 895
-
896
[10]
SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA-EX IN 1-3 MU-M INGAASP DH LASERS
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
NAMIZAKI, H
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
HIRANO, R
HIGUCHI, H
论文数:
0
引用数:
0
h-index:
0
HIGUCHI, H
OOMURA, E
论文数:
0
引用数:
0
h-index:
0
OOMURA, E
SAKAKIBARA, Y
论文数:
0
引用数:
0
h-index:
0
SAKAKIBARA, Y
SUSAKI, W
论文数:
0
引用数:
0
h-index:
0
SUSAKI, W
[J].
ELECTRONICS LETTERS,
1982,
18
(16)
: 703
-
704
←
1
2
→